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NexFlash Technologies, Inc.
7
PRELIMINARY
NXSF011C-0599
05/25/99 ©
NX26F080A
NX26F160
Output remaining 535 bytes
(4280 bits) of sector data
Output (Rewrite )1st byte of sector
with C9H Tag/Sync bite
Output two bytes of zeros (00 00H)
for the IS26F160
Assert CLK low for
t
RESET
to invoke Erase/Write Operation
and then standby operation
Output one clock to wake
device from stand-by
Call Read Sector Routine to
check Ready/Busy and Tag
Start Sector Erase/Write Routine
Return
(1)
Yes
No*
Device
Ready and Sector
Tag valid
*Set Flag and process
accordingly upon return
Output Command Sequence:
-Read command C3-C0 (0001B)
-Main Sector Address A1-A0
(000-FFFH)
-Device Address DA3-DA0
(per state of A3, A2, A1, A0 pins)
-Auxilary Address A15-A12
0H for main array
-Four reserved bytes R31-R0
(00 00 00 00H)
Figure 8. Sector Erase/Write Operation Flow Chart
Input first byte of data
(Tag/Sync) from sector
*Set Flag and process
accordingly upon return
Return
Yes
No*
No*
Yes*
Ready?
(99 99H)
Input remaining 535 bytes of
sector data (4280 bits)
Return to write routine?
Assert CLK low for
t
RESET
to
reset device and invoke standby
Valid Sector?
(C9H)
No
Start Sector Read Routine
Output clock (low to high) to
wake device from standby
Input Ready/Busy Status S15-S0.
Note t
RP
delay time is
required during status read
(See AC Timing and Figure 10)
Output Command Sequence:
-Read command C3-C0 (0001B)
-Main Sector Address A1-A0
(000-FFFH)
-Device Address DA3-DA0
(per state of A3, A2, A1, A0 pins)
-Auxilary Address A15-A12
0H for main array
5H device information sector
-Four reserved bytes R31-R0
(00 00 00 00H)
Yes
Figure 7. Sector Read Operation Flow Chart
Note:
1. To ensure higher data integrity verify each sector write with a sector read. See High Data Integrity Applications on Page 4.