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NX26F080A
NX26F160
10
NexFlash Technologies, Inc.
PRELIMINARY
NXSF011C-0599
05/25/99 ©
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameter
Conditions
Range
Unit
Vcc
Supply Voltage
0 to 7.0
V
V
IN
, V
OUT
Voltage Applied to Any Pin
Relative to Ground
­0.5 to Vcc + 0.6
V
T
STG
Storage Temperature
­65 to +150
°
C
T
LEAD
Lead Temperature
Soldering, Ten Seconds
+300
°
C
Note:
1. This device has been designed and tested for the specified operation ranges. Proper operation outside of these levels is not
guaranteed. Exposure beyond absolute maximum ratings (listed above) may cause permanent damage
OPERATING RANGES
Symbol
Parameter
Conditions
Min
Max
Unit
Vcc
Supply Voltage
26F080A-5T-R
26M080A-5T-R
4.5
5.5
V
26F080A-3T-R
26M080A-3T-R
2.7
3.6
V
26F160-5T-R
26M160-5T-R
4.5
5.5
V
26F160-3T-RS1
26M160-3T-R
3.0
3.6
V
26F160-3T-R
2.85
3.6
V
T
A
Ambient Temperature,
Commercial
0
+70
°C
Operating
Extended
(1)
­15
+80
°C
Industrial
(1)
­40
+85
°C
Note:
1. Contact
NexFlash for availability of extended or industrial grade devices.
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
IL
Input Low Voltage
­0.4
--
V c c x 0 . 2
V
V
IH
Input High Voltage
V c c x 0 . 6
--
Vcc + 0.5
V
V
OL
Output Low Voltage
I
O L
= 2 mA, V
C C
= 4.5V
--
--
0.45
V
V
OH
Output High Voltage
I
O H
= ­400
µ
A, V
C C
= 4.5V
2.4
--
--
V
V
OLC
Output Low Voltage CMOS
(1)
V
C C
= Min, I
O L
= 10
µ
A
--
--
0.15
V
V
OHC
Output High Voltage CMOS
(1)
V
C C
= Min, I
O H
= ­10
µ
A
V
C C
­ 0.3
--
--
V
I
L I
Input Leakage
0 < V
I N
< V c c
­10
--
+10
µ
A
I
OL
I/O Leakage
0 < V
I N
< Vcc, Output Disabled
­10
--
+10
µ
A
I
C C
(active)
Active Power Supply Current
(2)
f
C L K
8 MHz (1/t
C P
)
V
C C
= 4.5V to 5.5V
--
15
30
mA
V
C C
= 2.7V to 3.6V (NX26F080A)
--
5
10
V
C C
= 2.85V to 3.6V (NX26F160)
--
10
20
I
C C S B
(standby) Standby Power Supply Current
SIO = 0V or V
C C
,
--
<1
10
µ
A
SCK = 0V
C
IN
Input Capacitance
(1)
T
A
= 25°C, V
C C
= 5V or 3V
--
--
10
pF
Frequency = 1 MHz
C
OUT
Output Capacitance
(1)
T
A
= 25°C, V
C C
= 5V or 3V
--
--
10
pF
Frequency = 1 MHz
Notes:
1. Tested on a sample basis or specified via design or characterization data.
2. The device leaves "standby" power consumption after the clock transitions from low-to-high. Full "active" power consumption
starts after the correct device address has been decoded during a sector read or write sequence.