Oh, and in addition would assuming a 10% variation from the stated typical
figures be a reasonable assumption for design purposes?

>From my data:
* Typical Vbe(sat) @ -40C =3D 730mV
* Typical Vbe(sat) @  25C =3D 600mV
* Typical Vbe(sat) @  70C =3D 522mV

So the max Vbe(sat) at -40C would be 10% more than 730mV and the min
Vbe(sat) at 70C would be 10% less than 522mV.

Thanks,
-Jason White

On Wed, Aug 29, 2018 at 12:45 PM Jason White <
whitewaterssoftwareinfo@gmail.com> wrote:

> Hello Everyone,
>
> I am dealing with a design where the base-emitter saturation ("turn on")
> voltage of a MMBT4403 matters quite a bit. (A preexisting design uses it
> for temporary, fast-acting, over-current protection under the supervision
> of a microcontroller)
>
> Collector current =3D 3mA, Temperature =3D -40 to 70C
>
> I would like to understand better in what ways the base emitter saturatio=
n
> voltage can vary.
> In addition I would like to know if there exists any "rules of thumb"
>
> In the Diode's Inc datasheet page 4 [1] there is a graph titled "Figure 3
> Typical Base-Emitter Turn-On Voltage vs. Collector Current"
>
> From this graph I can determine the "typical" base-emitter saturation
> voltage Vbe(sat) with respect to temperature.
>
> I'd like to know what factors other than temperature and collector curren=
t
> affect Vbe(sat) and if there is any way to estimate their effect's on the
> voltage?
>
> I know there should be manufacturing variations from device to device.
> Perhaps there exists some upper bound to how much Vbe(sat) can vary from
> device to device?
>
> [1] https://www.diodes.com/assets/Datasheets/ds30058.pdf
>
> Thanks,
> Jason White
>


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Jason White
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