My guess is that they were talking about gate punch-through or degradation from excessive Vgs. Theoretically that's a very fast process. In practice I've yet to see a proven case of a power MOSFET dying due to unintended excess Vgs. I once did some experiments where I found that about 3x Vgs_max was needed to cause instant death to a power MOSFET (take this with a measure of salt - I think I only tested 2 devices, I was just trying to see what would happen). I'm sure much lower could cause slow degradation over time. On Fri, Dec 16, 2016 at 11:15 PM, James Cameron wrote: > On Fri, Dec 16, 2016 at 09:55:34PM -0500, Sean Breheny wrote: > > 100ns transients causing thermal damage? Can you describe the situation > > which caused this?! > > I've not experienced this, but I was reading Art of Electronics the other > day and this kind of thing was mentioned for FETs, though the mechanism o= f > failure was not necessarily thermal.. > > -- > James Cameron > http://quozl.netrek.org/ > -- > http://www.piclist.com/techref/piclist PIC/SX FAQ & list archive > View/change your membership options at > http://mailman.mit.edu/mailman/listinfo/piclist > --=20 http://www.piclist.com/techref/piclist PIC/SX FAQ & list archive View/change your membership options at http://mailman.mit.edu/mailman/listinfo/piclist .