Hello, I am planning on using a 2N7002 as part of the reset circuit in an
op-amp integrator. The circuit is used to generate variable speed voltage
ramps for a Doppler radar transceiver. In the integrator, I cannot easily
increase the integrating current to the point that leakage becomes
negligible so I must deal with it some other way.

Here are my questions:

(1) A 2N7002 often is rated for a "typical" Drain-Source leakage current of
1 micro-amp when 60 volts is across it a room temperature. Will this
leakage current decrease if the applied voltage is lower?

(1b) Is it possible to extrapolate how much lower the current would be at a
lower Vds voltage?

(2) Would placing multiple MOSFETs in series reduce the Drain-Source
leakage current? (Of course, then gate leakage current may start becoming a
factor.)

Thanks!
Jason White
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