> Note to self: The NXP application note AN721 "Impedance Matching Networks
> Applied to RF Power Transistors", specifically the section on three and
> "four reactant matching networks" probably applies here.
>
> I'm guessing that they are using the transmission lines primarily as low
> value inductors. Initially I had calculated the inductance and capacitanc=
e
> of each microstrip, but I was off on the inductance by several orders of
> magnitude. I have updated the simulation to more accurately model the
> inductance and capacitance. Unfortunately, modeled performance is still
> relatively poor with only about 10% of power delivered to the gate around
> 900MHz.

I wonder if they are using the transmission lines as inductors or,
instead, using them as transmission lines to rotate the load impedance
around a Smith chart, then add a parallel capacitor, rotate the impedance
some more, add another capacitor, etc.

Harold



--=20
FCC Rules Updated Daily at http://www.hallikainen.com
Not sent from an iPhone.
--=20
http://www.piclist.com/techref/piclist PIC/SX FAQ & list archive
View/change your membership options at
http://mailman.mit.edu/mailman/listinfo/piclist
.