I'm not sure I understand - the article strongly suggested that they were
expecting that people would do this with existing semiconductor devices
(why else would they provide links to power semi manufacturers)? Seems
kinda strange when none of those mfgs offer GaN FETs with a high enough VDS
max for the application. I highly doubt that it would make sense to place
multiple ones in series to achieve the required standoff voltage.


On Wed, Jul 30, 2014 at 1:47 PM, RussellMc <apptechnz@gmail.com> wrote:

> >
> >
> > > ...
> > SiC might make sense but GaN devices have not yet reached the
> > necessary voltage levels from what I've seen.
> >
>
> That will be part of the challenge. They are looking for breakthrough
> rather than just good implementation.
>
>
>            R
> --
> http://www.piclist.com/techref/piclist PIC/SX FAQ & list archive
> View/change your membership options at
> http://mailman.mit.edu/mailman/listinfo/piclist
>
--=20
http://www.piclist.com/techref/piclist PIC/SX FAQ & list archive
View/change your membership options at
http://mailman.mit.edu/mailman/listinfo/piclist
.