I looked at the data sheet for the 10F322 after your original post.. =20
The endurance is 10K minimum Erase/Write cycles.  Since Erase/Write=20
cycles are performed on entire rows, there is no difference between cell=20
endurance and row endurance.

Flash memory is intended as program memory, and 10K program changes=20
seems reasonable.  It CAN be used as data storage, but 10K is not a lot=20
for that purpose.  If you need to store data that changes a lot, you=20
should pick a chip with EEPROM on it, or use something external like the=20
MCP79410.

Kerry

On 7/9/2014 2:43 AM, Peter wrote:
> Sorry for pounding on on a dead horse, I am somewhat mystified by the lac=
k
> of participation on this thread which I started? Should I take this
> elsewhere? Is there no way to clarify these things other than by talking =
to
> a fae or such, which I have no need to do for now?
>
> Reminder: This was about flash/row cell endurance for new midrange and sm=
all
> pics, like 10F322, with examples of data from the datasheet which left me
> more confused than before.
>
> tia for comments (flames etc.),
>
> -- Peter
>

--=20
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