> Instead of using a Schottky diode, why not use a P-MOSFET? the intrinsic=
=20
> diode will have a much lower voltage drop I suspect the resistance of the=
=20
> MOSFET if carefully chosen would be lower.
>=20
> Colin
> --

Do you mean like in a reverse voltage polarity protection? Or just using th=
e=20
intrinsic diode (gate tied to source)?

The reverse voltage polarity protection circuit will not work since I have =
the=20
battery on one side of the p-mos and the PV cell on the other. Or?

/Ruben


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Ruben J=F6nsson
AB Liros Electronic
Box 9124
200 39 Malm=F6 Sweden
www.liros.se
Tel +46 40142078
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