On 31/07/2011 08:39, SidPIC wrote:
> It says that they have 1k of
> something called as "Simulated EEPROM" and this can be increased to large=
r
> values by making appropriate changes to bootlaoder, linker script and EEP=
ROM
> library.

The "Simulated EEPROM" is simply program (flash) memory being set aside=20
for EEPROM type purposes.

> Any clues about how it can be done? I am thinking of changing the
> section of linker script where they reserve 4K of flahs memory for eeprom=
 to
> something larger, but I am not sure if that is the only thing that will
> suffice. Have you done somethign simialr before? If yes, any tips would b=
e
> helpful.

I'm not too sure without looking at it in more detail.
I have altered linker scripts with PIC16/18 to accommodate various=20
different data chunks in my programs, the PIC32 is a bit different=20
though. You will have a .map file that you can look at to see where=20
things are being placed, and the C32 manual should give you information=20
on the linking and how to manipulate it.
The code looks like it defines the program memory as a packed const int=20
with num pages * instruction size. Try increasing NUM_DATA_EE_PAGES if=20
you haven't already.
Sorry I can't be of more help, I'm not really sure and I'm half asleep :-)

If you don't need to erase more than 1000 times I would consider just=20
writing straight to program memory as detailed in section 5 - I think=20
all the eeprom library does is wrap those features up into convenient=20
functions and make the most of the erase cycle limitation (though I=20
might be wrong)
The library is using the NVMWriteWord() function which I assume is part=20
of the standard plib.h, so you could write your own EEPROM functions=20
using this and the info in section 5 quite easily.

--=20
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