Al Shinn wrote:
> If a FET is connected from the collector to base of a bjt(like a
> Darlington but with a FET for the "top" transistor), can the bjt
> transistor achieve saturation specs?

No.  Think about it.

At best the FET will have 0V accross it when on.  That is the same as tying
the collector and base together.  The collector will therefore need to be a=
t
high enough voltage to cause base current, which will be above saturation.

By the way, this configuration is basically what a IGBT (integrated gate
bipolar transistor) is.


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