> If a FET is connected from the collector to base of a bjt(like a
> Darlington but with a FET for the "top" transistor), can the bjt
> transistor achieve saturation specs? Apropos of the OP's desire for a
> variable load for a battery tester.
> --
>
> Looking forward,
> Al Shinn

Nope. The BJT meeds about 700mV Vbe for there to be any base current. A
saturated BJT has about 300mV Vce. So, at best, the Vce with a collector
to base short through the FET would be 700mV.

Harold



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