On 15/04/2011 15:23, Sean Breheny wrote:
> I've never been able to find a general reference which states that
> this is always the case for MOSFETs, but have a look at this
> datasheet:
>
> http://www.irf.com/product-info/datasheets/data/irfs4310.pdf
>
> Specifically, see fig 1 versus fig 2. The lowest curve is for Vgs=3D4.5
> Volts. At Vds=3D1 volt, the 25 deg C curve is about 1.5 Amps. the 175
> deg C curve is about 22 Amps.
>
> Compare with figure 4 which shows that Rds ON also increases with tempera=
ture.
>
Yes, RDS on *INCREASES* with temperature, thus they can be safely=20
paralleled without BJT thermal runaway and without source "ballast"=20
resistors.



--=20
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