On 14/04/2011 15:58, V G wrote:
> Hey all, instead of using a wire wound resistor for testing battery drain=
,
> I'm thinking of using a heat sink bound MOSFET and control the drain-sour=
ce
> current with the gate. I'm looking to get around a 0.5 - 2 ohm resistance
> between drain and source. Is this possible?

yes, but measure the source current with a 0.01 to 0.5 Ohm resistor as=20
the "resistance" will increase as it warms. This is why FETs can be=20
paralleled, unlike bipolar which give INCREASE in current with temperature.


--=20
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