On 2011-02-20 15:44, IB Peter Feucht wrote:
> Question: Does anybody have information about the reliability of eeprom
> content?
> How is it possible that eeprom content changes (electric field, magnetic
> fields or or or)
>

Are any other locations in the EEPROM being written on a regular=20
basis?    If so, it can degrade the retention time of the non-rewritten=20
locations.  A solution is to re-write the entire EEPROM contents=20
occasionally.

Joe



--=20
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