On 06/10/2010 13:59, Olin Lathrop wrote:
> ivp wrote:
>> As I understood it, a Schottky is not a fast recovery diode.
> Actually they are very fast recovery.  Instead of a P-N junction a Schott=
ky
> is made from a junction between a semiconductor and a metal.  This is why
> its forward drop is less than a "silicon" diode, but also why it has high=
er
> reverse leakage and it can't be made to withstand the same high reverse
> voltages.
>
> The big difference related to recovery time is that the depletion region =
is
> smaller and minority carriers flush out much more easily.  For most desig=
ns,
> Schottky diodes can be considered to have "zero" recovery time.  That's n=
ot
> true of course, but often the recovery time is small enough that other
> effects in the circuit dominate and it can be ignored.
>

Agreed 100%
--=20
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