ivp wrote:
> As I understood it, a Schottky is not a fast recovery diode.

Actually they are very fast recovery.  Instead of a P-N junction a Schottky
is made from a junction between a semiconductor and a metal.  This is why
its forward drop is less than a "silicon" diode, but also why it has higher
reverse leakage and it can't be made to withstand the same high reverse
voltages.

The big difference related to recovery time is that the depletion region is
smaller and minority carriers flush out much more easily.  For most designs=
,
Schottky diodes can be considered to have "zero" recovery time.  That's not
true of course, but often the recovery time is small enough that other
effects in the circuit dominate and it can be ignored.


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