IRF1404 RdsON= 4 mili
or
CSD17312Q5 RdsON= 1.4 mili from TI no need TO220 for 30Amps!
I worked with such low miliOhms Rds and the wires have more mili
than the RdsON so in case of something works bad the tracks/wires
will burn, not the MOS :))) If the Mos will be burned there is other
problems in the design (times constants, bad caps, bad Vgs, etc).


I hope will help you

Cheers
Miki


> Good day to all.
>
> I'm looking at a buddy's project where his requirements have changed
> slightly.
>
> He's currently using a IRF1405 N-channel Mosfet with a data-sheet
> rating of RDSon = 5.3 Milli-Ohms.
>
> He's finding that the temperature rise is higher than he likes and is
> therefore looking for a Mosfet with lower RDSon.
>
> The circuit operates at less than 30 Vdc and he has at least 10V of
> gate drive available.
>
> He'd prefer to stay with the current TO-220 package if possible.
>
> Any suggestions?
>
> Recap: N-channel Mosfet, TO-220 package, Vds 30V max, Id 30A max,
> RDSon < 3 Milli-Ohms, > 10V gate drive available.
>
> Many thanks!
>
> dwayne
>
> --
> Dwayne Reid   <dwayner@planet.eon.net>
> Trinity Electronics Systems Ltd    Edmonton, AB, CANADA
> (780) 489-3199 voice          (780) 487-6397 fax
> www.trinity-electronics.com
> Custom Electronics Design and Manufacturing
>
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