>
> I am using a 4Gbit NAND flash memory. This flash has 2KB page size - All
> read/write shall be on page boundaries. The write operation will latch all
> of the 2K data sequentially (Data sequence) and programming will start
> after
> receiving the "Program" command. I would like to know if I can break up
> the
> "Data sequence". Something like, I write the first 1K of data.. then
> disable
> the device.. then I write the next 1K of data and then start programming.



Some definitely can, you can check the data sheet and see where you can
pause for long times.  I've done similar.
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