> Sergey Dryga wrote: >> Vce(sat) - collector-emitter saturation voltage >> should not be significantly higher for a darlington compared to regular >> NPN transistor, > > Oh yes it is. Consider where the base voltage for the second transistor > comes from. > Also, I don't think of Darlingtons ever really going into saturation (at least the second transistor). The Vce saturation voltage of a silicon transistor is something like 300mV, but it takes 700mV Vbe to get the transistor to conduct. So, the Vce for the second transistor is maybe 300mV (Vce saturation for the first transistor) plus 700mV (Vbe of the second transistor). So, there's about 1V Vce on the second transistor, quite a ways from saturation. Harold -- FCC Rules Updated Daily at http://www.hallikainen.com - Advertising opportunities available! -- http://www.piclist.com PIC/SX FAQ & list archive View/change your membership options at http://mailman.mit.edu/mailman/listinfo/piclist