Spehro Pefhany wrote:
> One obvious (?) purpose would be to have very low Vce (perhaps in the
> single or low-double-digit mV range), and to avoid the need for a low
> Rds(on) small-signal p-channel MOSFET.

But that's pretty much true as long as the transistor is saturated.  You
don't get much more by oversaturating the transistor.


******************************************************************
Embed Inc, Littleton Massachusetts, (978) 742-9014.  #1 PIC
consultant in 2004 program year.  http://www.embedinc.com/products
-- 
http://www.piclist.com PIC/SX FAQ & list archive
View/change your membership options at
http://mailman.mit.edu/mailman/listinfo/piclist