Ahh, I see says the blind man to the deaf mute. Mucho gracias all. On Mar 13, 2005, at 1:04 AM, Russell McMahon wrote: >> I'm and ME so I'm a little lost here. I needed an H-Bridge to control >> a small motor (about 10A) so I sat down and got aquatinted with >> Google. I read and read and then read some more then I finally >> designed an H-Bridge. I used all NPN transistors for the corners and >> it works fine from what I can see; however, most H's I read about >> used a combination of PNP and NPN. Just wondering why this mixing of >> xsters is used instead of simply using one variant or the other. > > Summary: Using PNP high side drivers allows a simpler circuit and no > extra high side driver power supply. > > Or: It's just that it's easier to use PNPs for the high side > drivers. It can be done with all NPNs but there are additional design > requirements to meet. > > An NPN bipolar transistor must have its base driven higher than it's > emitter to turn on. Actual be voltage is approaching 1 volt and the > drive circuit will usually drop some voltage. The NPN collector is > connected to V+ and the emitter to the load high side. It is very > desirable that the transistor be saturated or very nearly saturated so > the CE voltage drop is typically under a volt. As a consequence you > need a high driver supply which is above V+ by several volts or more. > While this is easily enough provided, it adds complexity and cost and > it would be "nice" to not need this extra high side supply. When an N > Channel FET (still a transistor) is used as a high side driver you > typically need a 12v or higher high side supply. > > When a PNP bipolar transistor is used as the high side driver the > emitter is connected to V+ and the collector to load high side. The > base must be driven negative relative to the emitter and V+ to turn it > on. This does not require an additional high side power supply as the > whole V+ voltage is available to derive drive from. > > For low power circuits you can use NPN high side drivers without a > high side supply above V+. The transistors do not saturate and the > dissipation in the driver is higher than it would otherwise be. This > solution becomes impractical as power levels increase. eg at 10A and > with 2 volts Vceon you get 20 watts dissipation - less with under 100% > duty cycle. This would generally be unacceptable. > > > > RM > > -- > http://www.piclist.com PIC/SX FAQ & list archive > View/change your membership options at > http://mailman.mit.edu/mailman/listinfo/piclist > -- http://www.piclist.com PIC/SX FAQ & list archive View/change your membership options at http://mailman.mit.edu/mailman/listinfo/piclist