> I have a transistor (2n3904) that is used as a buffer/amp/conditioner in > my software based 1200 baud modem receiver. AFAICT, the input is in the > 200mV range and I need a 5V swing on the output. 5.0/0.2 = Gain of 25. Max gain possible is about 38.4 x Vcc ~= 200 so it can be done. (People will query that gain calculation ! :-) ) The **** FIRST **** thing to try is to place an electrolytic capacitor from emitter to ground - say 10 uF should do. More wont hurt. > Right now, the > transistor is connected as follows. The base is fed the DC blocked > audio signal. The base is pulled up to Vcc with a 3M3 resistor This is not a legitimate way to bias silicon transistors. It will work after a fashion sometimes maybe. It's legit for Germanium. (People will query ... :-) ). A silicon transistor should have the bias point set explicitly. In this case with two R's - one each to supply and ground from base. > and has > a 5V zener to ground to protect it from the ringing signal voltage. The probably not needed but OK > collector is tied to Vcc with a 1M resistor. The emitter is routed to > ground thru a 2K resistor. Gain with emitter bypassed with cap as above would be about Rc/26 * IcmA Here Icmax = 5/1m = 5 uA = 0/005 mA So gain = 1m/26* 0.005 = 200 = OK Try the emitter bypass capacitor !! > As I understand this, the transistor is held > in saturation by the self biasing action. if it germanium :-) >The collector "idles" at > about 200mV and the base at about .5 - .6V The problem is that this only > gives me a 2V swing at the collector with a 200mV drive applied to the > base. > > After some tinkering, I changed the collector resistor to 330K and the > emitter resistor to 1K and this gives me 4V peak at the collector, but I > don't really know why. Ideally, I want to have as much gain as possible > to the point of massively clipping the signal in order to shape the sine > wave into a pseudo square wave for driving the PIC pin digitally. I > don't need any real current from the transistor, just some more voltage > gain and faster switching. > > Can someone recommend something using the same 2n3904 that will give me > considerably more gain and consequently a steeper rising edge to the > PIC. I'm using a 16F628, but don't have enough pins available to use > the internal comparator to do the job. I'd also like to accomplish this > with just discrete components and no extra ICs. You can get a truly lovely result with 2 transistors in a long tailed pair (Google ...) but letssee if we can make the transistor worlk OK (although it may be already with that cap.) Set Vc at 1/2 supply quiescent. Aim at say 1 mA Ic to start Rc = (Vcc-Vcquiesc)/Ic = (5-2.5)/.001 = 2500 ohms. We want a smll emitter resistor to allow base to float away from ground clamped position. Say Re = 100r gives 100/2500 * 2.5 = 0.1 volt dc at 1mA so OK. Place 10 uF+ across Re Ve = 0.1v so Vb = 0.6 + 0.1 = 0.7v or so. V Rb-+ = 4.3v V Rb-gnd = 0.7v ratio of Rs about 6:1 10K:1.5K 12K:2k2 etc using R12s 10:1.5K Vb = 1.5/11.5*5 = 0.65 too low 12k:2k2 Vb = 2.2/14.2 x 5 = 0.767v = OK Try R C-V+ = 2500r R B-V+ = 12K R B-gnd = 2k2 R E-gnd = 100r C E-gnd = 10 uF C coupling in = whatever (10 or 100 uF?) Required Ib = Ic/beta = 1 mA/100 say = 10 uA I in 12K Rb-V+ is about 4.2/12k = 300 uA so plenty for base. Howzat ? RM Try Rb-Vcc = 10k Rb-gnd = 2k7 Vb = 2.7/12.7 * 5 = > > michael brown > > -- > http://www.piclist.com#nomail Going offline? Don't AutoReply us! > email listserv@mitvma.mit.edu with SET PICList DIGEST in the body > -- http://www.piclist.com#nomail Going offline? Don't AutoReply us! email listserv@mitvma.mit.edu with SET PICList DIGEST in the body