Hmmm... Still confused.
I *thought* (correct me if I'm wrong) that an IGBT needed 5V-15V, depending
on the device, gate-emitter to switch on. In the on condition it should have
less than 2V emitter-collector, unless I'm missing something (I usually am
;o)  ) that would necessitates a gate drive 3V-12V higher than Vdd.
(assuming standard H-bridge with the high side collectors connected to Vdd)

Am I missing something?
(schematics would be greatly appreciated)

-Denny

----- Original Message -----
From: "Bob Axtell" <cr_axtell@YAHOO.COM>
To: <PICLIST@MITVMA.MIT.EDU>
Sent: Monday, September 01, 2003 1:59 AM
Subject: Re: [EE]: High Voltage H-bridge design


> Drive it with MOSFETS switched on/off with opto-isolators. They switch
> sorta slow, but will work fine for this. Use H11F1, its an internal FET,
> can handle the HV.
>
> --Bob
>
> At 12:37 AM 9/1/2003 -0400, you wrote:
> >Does anybody have any good information about high voltage H-bridges?
(about
> >200V @ 4A)
> >
> >I was thinking about IGBT but I'm a little fuzzy about how to drive the
high
> >side of the bridge.
> >
> >Thanks
> >-Denny
> >
> >--
> >http://www.piclist.com hint: The PICList is archived three different
> >ways.  See http://www.piclist.com/#archives for details.
>
> --------------
> Bob Axtell
> PIC Hardware & Firmware Dev
> Tucson, AZ
> 1-512-219-2363
>
> --
> http://www.piclist.com hint: The PICList is archived three different
> ways.  See http://www.piclist.com/#archives for details.
>

--
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