I would consider FRAM (ferroelectric ram) devices in lieu of FLASH.

Bob Ammerman
RAm Systems

----- Original Message -----
From: "Brent Brown" <brent.brown@CLEAR.NET.NZ>
To: <PICLIST@MITVMA.MIT.EDU>
Sent: Monday, August 05, 2002 2:08 AM
Subject: Re: [EE]: Flash endurance


> My guess then is that the endurance is the number of times a location
> can undergo the read/write procedure, I would count 1 for each
> read/modify/write even though there are 2 steps in the process. Worst
> case you will be out by a factor of 2?
>
> Have looked at some Samsung SmartMedia chips recently and they say
> less than 0.1% failure in 1 million program/erase cycles. I think the
> idea is it's anyones guess when they actually fail and you need to
> take this into account with bad block mangement.
>
> --
> Brent Brown, Electronic Design Solutions
> 16 English Street, Hamilton, New Zealand
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> eMail:  brent.brown@clear.net.nz
>
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