>I am curious about one thing: What are the major differences between IGBTs
>and MOSFETS? Lower Rds(on)?
>
>Sean

Yes, very low Rds on - minimizes heat-sink requirements.
Postive temp coefficient (turns OFF as it gets hotter, rather than the
          other way around ala Bipolar, so avoids thermal runaway).
Almost infinite power gain at low switching rates.
Extremely fast turn-on and turn-off at hi currents, maximizes switching
          power supply efficiency.

But -- exceed the maximim gate-source  voltage for a nanosecond and kiss it
goodby.

Regards,
  Ron Fial